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VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 1000 V 1000 V
I C25 20 A 20 A
VCE(sat) 3.5 V 4.0 V
Combi Packs
Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ T JM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 150 Clamped inductive load, L = 300 H TC = 25C
Maximum Ratings 1000 1000 20 30 20 10 40 ICM = 20 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C
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TO-247 AD
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features
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Mounting torque (M3)
1.13/10 Nm/lb.in. 6 300 g C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
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International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOS TM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM
Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25C TJ = 125C 5.5 400 5 100 10N100U1 10N100AU1 3.5 4.0 V V A mA nA V V
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BV CES V GE(th) I CES I GES V CE(sat)
IC IC
= 4 mA, V GE = 0 V = 500 A, VCE = VGE
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AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, V GE = 20 V IC = I C90, VGE = 15 V
Advantages
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Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost
(c) 1997 IXYS All rights reserved
91753F (3/97)
IXGH 10N100U1 IXGH 10N100AU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 4 8 750 VCE = 25 V, VGE = 0 V, f = 1 MHz 200 30 52 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 300 H, VCE = 0.8 V CES, RG = Roff = 150 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 V CES, RG = Roff = 150 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG 10N100U1 10N100AU1 10N100U1 10N100AU1 10N100U1 10N100AU1 10N100AU1 13 24 100 200 550 800 500 2 100 200 1.1 600 1250 600 5.0 2.5 1000 2000 1000 3 900 70 25 45 S pF pF pF nC nC nC ns ns ns ns ns mJ ns ns mJ ns ns ns mJ mJ 1.2 K/W 0.25 K/W
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
I C = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.75 6.5 120 50 V A ns ns
IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF /dt = 100 A/s VR = 540 V TJ = 125C IF = 1 A; -di/dt = 50 A/s; VR = 30 V TJ = 25C
60
1.6 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXGH 10N100U1 IXGH 10N100AU1
Fig. 1 Saturation Characteristics
20 18 16 12 10 8 6 4 2 0 0 1 2 3 4 5
7V 9V T J = 25C VGE = 15V 13V
Fig. 2 Output Characterstics
80
11V TJ = 25C VGE = 15V 13V
70 60
IC - Amperes
IC - Amperes
14
50 40 30 20 10 0
9V 11V
7V
0
2
4
6
8
10 12
14 16 18 20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
T J = 25C
Fig. 4 Temperature Dependence of Output Saturation Voltage
1.5 1.4
VGE = 15V IC = 20A
V(sat) - Normalized
1.3 1.2 1.1 1.0 0.9
IC = 5A IC = 10A
VCE - Volts
6 5 4 3 2 1 0 5 6 7 8 9 10 11 12 13 14 15
IC = 5A IC = 20A IC = 10A
0.8 0.7
-50
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig. 5 Input Admittance
20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 10N100p1.JNB
T J = 125C T J = 25C
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.3 1.2
V GE(th) IC = 250A
V CE = 10V
BV / V(th) - Normalized
1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25
IC - Amperes
BVCES IC = 3mA
TJ = - 40C
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
(c) 1997 IXYS All rights reserved
IXGH 10N100U1 IXGH 10N100AU1
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current
900 850
T J =125C RG=150
Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG
7 6 1000 800
T J =125C IC = 10A tfi
5 4 3
Eoff
tfi- nanoseconds
tfi - nanoseconds
800 750 700 650 600
tfi
5 4 3 2 1
Eoff - millijoules
600 400 200 0
2 1 0
4
6
8
10
12
14
16
18
20
22
20
40
60
80
100
120
140
160
IC - Amperes
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15
IC = 10A VCE = 800V
Fig.10 Turn-Off Safe Operating Area
12
10
IC - Amperes
TJ = 125C
VGE- Volts
9 6 3 0
RG = 150
1
dV/dt < 3V/ns
0.1
0.01 0 10 20 30 40 50 0 200 400 600 800 1000
Qg - nCoulombs
VCE - Volts
Fig.11 Transient Thermal Impedance
Thermal Response - K/W
1
D=0.5 D=0.2 D=0.1
0.1 D=0.05
D=0.02 D=0.01 Single Pulse D = Duty Cycle
0.01 0.00001
0.0001
0.001
0.01
0.1
1
Time - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
Eoff - millijoules
Eoff
IXGH 10N100U1 IXGH 10N100AU1
Fig.12 Maximum Forward Voltage Drop Fig.13 Peak Forward Voltage VFR and Forward Recovery Time tFR
50
TJ = 125C
40 35
1000
IF = 12A VFR
Current - Amperes
VFR - Volts
25 20 15 10 5 0 0.0
TJ = 100C TJ = 150C TJ = 25C
30 20
tfr
600 400 200 0 400
10 0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
100
200
300
Voltage Drop - Volts
diF /dt - A/s
Fig.14 Junction Temperature Dependence off IRM and Qr
1.4 1.2 2.0
Fig.15 Reverse Recovery Chargee
TJ = 100C
Qr - nanocoulombs
Normalized IRM /Qr
1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160
IRM Qr
1.5
VR = 540V IF = 12A
1.0
0.5
0.0 1 10 100 1000
TJ - Degrees C
diF /dt - A/s
Fig.16 Peak Reverse Recovery Current
30
TJ = 100C
Fig.17 Reverse Recovery Time
600
TJ = 100C
25
VR = 540V
500
VR = 540V IF = 12A
20 15 10 5 0 100 200 300 400
trr - nanoseconds
IF = 12A
IRM - Amperes
400 300 200 100 0 0 100 200 300 400
diF /dt - A/s
diF /dt - A/s
(c) 1997 IXYS All rights reserved
tfr - nanoseconds
30
40
800
IXGH 10N100U1 IXGH 10N100AU1
Fig.18 Diode Transient Thermal resistance junction to case
1.0
RthJC - K/W
0.1 0.001
0.003
0.01
0.1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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